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Laser Diode Grade, 2",  N-type, undoped, Free-standing Gallium Nitride (GaN) single Crystal, C plane (0001) - MSE Supplies

Laser Diode Grade, 2", N-type, undoped, Free-standing Gallium Nitride (GaN) single Crystal, C plane (0001)

  • 2,74900
  • Save $ 65000


Free-standing (single crystal) GaN substrate, C plane (0001),  size 2" diameter
Conductivity type: N-type (non-doped)
If you buy more than 2, please contact us for discount.
  • Dimension: 2" diameter
  • Thickness: 350 ± 25 μm
  • Usable area: >90%
  • Orientation: C plane (0001) ± 1°
  • Total Thickness Variation: <15 μm
  • Bow: < 20 μm
  • Resistivity (300K): < 0.5 Ohm.cm
  • Carrier Concentration:1e17cm-3
  • Mobility: 500 cm2/V*s
  • Dislocation Density: < 5x105 cm-2 
  • Polishing: Front surface: Ra < 0.2 nm, epi-ready polished. back surface fine ground.
  • Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere. 

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