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AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si)

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AlGaN/GaN high electron mobility transistors (HEMTs) grown on 2 inch Silicon wafer

  • Thickness of GaN Cap Layer: 3 nm
  • AlGaN compostion (%Al): 26% Al
  • AlGaN thickness (nm): 25 nm
  • AlN thickness: 1 nm
  • Thickness of GaN (um): 2 um
  • Thickness of buffer layer (um): ~ 1 um
  • Thickness of Si(111) substrate (um): 700 um or 1500 um (for 2 inch Si substrate)
  • Sheet resistivity (ohms/sq): <420
  • Mobility: >1300 cm2/V-sec for Si substrate
  • Sheet carrier concentration (/cm³): ~ 1e13
  • Electrical breakdown voltage: >1.4 kV (>1400 V)
  • Bow: <60um
  • Sheet Concentration: > 0.9e13/cm3
  • RMS Roughness (AFM): ≤ 0.5 nm
  • 2 um GaN Layer Reisistivity: > 1e5 ohm.cm

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