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GaN High Electron Mobility Transistor (HEMT) on 2 Inch Silicon Substrate

  • 46900


AlGaN/GaN high electron mobility transistors (HEMTs) grown on Silicon substrate (2 inch wafer)

Thickness of GaN Cap Layer: 3 nm

AlGaN compostion (%Al): 26% Al

AlGaN thickness (nm): 25 nm

AlN thickness: 1 nm

Thickness of GaN (um): 2 um

Thickness of buffer layer (um): ~ 1 um

Thickness of Si(111) substrate (um): 700 um or 1500 um (for 2 inch Si substrate)

Sheet resistivity (ohms/sq): <420

Mobility: >1300 cm2/V-sec for Si substrate

Sheet concentration (/cm³): ~ 1e13

Bow: <60um

Sheet Concentration: > 0.9e13/cm3

RMS Roughness (AFM): ≤ 0.5 nm

2 um GaN Layer Reisistivity: > 1e5 ohm.cm

 

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