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AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si)

  • $ 53500


AlGaN/GaN high electron mobility transistors (HEMTs) grown on 2 inch silicon substrate

HEMT structure for 650 V power electronics applications

Special layer structures can be custom made upon request. Please contact us for a quote. D-mode HEMT, E-mode HEMT, RF HEMT wafers are available upon request.

GaN HEMT on silicon layer structure

  • Thickness of GaN Cap Layer: 3 nm
  • AlGaN compostion (%Al): 26% Al
  • AlGaN barrier layer thickness (nm): 25 nm
  • AlN inter-layer thickness: 1 nm
  • Thickness of GaN (um): 2 um
  • Thickness of buffer layer (um): ~ 1 um
  • Thickness of Si (111) substrate (um): 1000 um (or 675 um or 1500 um for 2 inch Si substrate)
  • Sheet resistance (Ohms/sq): <420
  • Electron mobility: >1300 cm2/V-sec for Si substrate
  • Sheet carrier concentration (/cm): ~ 1E13
  • Electrical breakdown voltage: >1000V
  • Bow: <60 um
  • RMS roughness (AFM): < 0.5 nm (5 um x 5 um area)
  • 2 um GaN layer Resistivity: > 1E5 Ohm.cm

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