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AlGaN/GaN HEMT on 2 in Conductive SiC Wafer (GaN/SiC)

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AlGaN/GaN high electron mobility transistors (HEMTs) grown on Conductive Silicon Carbide (SiC) wafer

  • Substrate: Silicon Carbide (0001), 2 inch diameter conductive type SiC wafer (Semi-insulating type SiC substrates are available upon request)
  • Thickness of GaN buffer (um): 1.8 ± 0.25μm
  • AlGaN compostion (%Al): 20 (optional), 23 (optional) or 26 (default) ± 1.25%
  • AlGaN thickness (nm):  21 ± 1nm
  • AlN thickness: 1 ± 0.5nm
  • Sheet resistivity (ohms/sq): <420 ohms/sq
  • mobility(cm2/v-sec): >1200 cm2/V-sec
  • Sheet concentration (/cm³): >1e13/cm³
  • Bow: <60 um
  • Buffer Layer Resistivity (ohms/sq): >1e5 ohms/sq

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