Conductive Silicon Carbide Substrate, 2 Inch GaN HEMT on SiC, High Electron Mobility Transistor (HEMT) on SiC Wafer Substrate

To better serve you, we would like to communicate with you about technical details. Please Contact Us for a quote.

AlGaN/GaN high electron mobility transistors (HEMTs) grown on Conductive Silicon Carbide (SiC) substrate

Substrate: Silicon Carbide (0001), 2 inch diameter conductive type SiC wafer (Semi-insulating type SiC substrates are available upon request)

Thickness of GaN buffer (um): 1.8 ± 0.25μm

AlGaN compostion (%Al): 20 (optional), 23 (optional) or 26 (default) ± 1.25%

AlGaN thickness (nm):  21 ± 1nm

AlN thickness: 1 ± 0.5nm

Sheet resistivity (ohms/sq): <420 ohms/sq

mobility(cm2/v-sec): >1200 cm2/V-sec

Sheet concentration (/cm³): >1e13/cm³

Bow: <60 um

Buffer Layer Resistivity (ohms/sq): >1e5 ohms/sq


Related Publications:

We Also Recommend