GaN High Electron Mobility Transistor (HEMT) on 2 Inch Conductive SiC Substrate

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AlGaN/GaN high electron mobility transistors (HEMTs) grown on Conductive Silicon Carbide (SiC) substrate

Substrate: Silicon Carbide (0001), 2 inch diameter conductive type SiC wafer (Semi-insulating type SiC substrates are available upon request)

Thickness of GaN buffer (um): 1.8 ± 0.25μm

AlGaN compostion (%Al): 20 (optional), 23 (optional) or 26 (default) ± 1.25%

AlGaN thickness (nm):  21 ± 1nm

AlN thickness: 1 ± 0.5nm

Sheet resistivity (ohms/sq): <420 ohms/sq

mobility(cm2/v-sec): >1200 cm2/V-sec

Sheet concentration (/cm³): >1e13/cm³

Bow: <60 um

Buffer Layer Resistivity (ohms/sq): >1e5 ohms/sq


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