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Chemical Vapor Deposition (CVD) Continuous Tin Disulfide (SnS<sub>2</sub>) Film - MSE Supplies LLC

Chemical Vapor Deposition (CVD) Continuous Tin Disulfide (SnS2) Film

  • £98200


Chemical Vapor Deposition (CVD) Continuous Tin Disulfide (SnS2) Film

  • Film: Continuous Tin Disulfide (SnS2)
  • Substrate: Single Side Polished C-plane Sapphire (SU5011) 
  • Size: 10x10mm
  • Coverage: Full

Applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention owing to their diverse properties ranging from insulator to metal and promising for a wide range of applications. TMDs and their 2D van der Waals heterostructures have been proposed and demonstrated in various applications, such as electronics, optoelectronics, photonics and photovoltaics.

As an important member of the TMDs family, tin disulfide (SnS2) has drawn considerable attention recently due to its low production cost, high chemical stability, excellent photosensitivity and superior photoelectric properties. SnS2 is reported to have a visible-light band gap around 2.2eV, which offers possibilities in solar cells design, gas sensing and visible-light water splitting manipulation.

We can offer continuous SnS2 film and Isolated SnS2 flakes on substrates, such as sapphire, Si, Si/SiO2, quartz etc. Substrate size is also customizable. Please contact MSE Supplies if you need bulk pricing or customization.

References:

1. Highly selective electrocatalytic reduction of CO2 to formate over Tin (IV) sulfide monolayers. Journal of Catalysis 364 (2018): 125-130.

2. Two-dimensional alloying molybdenum tin disulfide monolayers with fast photoresponse. ACS applied materials & interfaces 11, no. 42 (2019): 39077-39087.

3. Tin Disulfide: An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics. ACS nano 8, no. 10 (2014): 10743-10755.

4. Effective lattice Hamiltonian for monolayer tin disulfide: Tailoring electronic structure with electric and magnetic fields. Physical Review B 97, no. 24 (2018): 245410.


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