{"title":"Sapphire Wafers and Substrates","description":"\u003cp\u003e\u003cspan\u003eMSE Supplies is your go-to source for sapphire wafers and substrates for research and manufacturing. In addition to our extensive selection, we fully \u003c\/span\u003e\u003ca href=\"https:\/\/www.msesupplies.com\/collections\/customization-services\"\u003ecustomize our sapphire substrate and wafers\u003c\/a\u003e\u003cspan\u003e by size, thickness, orientation and patterns to meet your specifications. \u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003eBrowse sapphire (Al2O3) wafers for sale at MSE Supplies. 1\", 2\", 3\", 4\", 6\"\u003cspan data-mce-fragment=\"1\"\u003e, 8\" \u003c\/span\u003esapphire wafers are in stock. We are a sapphire wafer supplier trusted by scientists and engineers worldwide for our high quality products. Customized sapphire wafers are available upon request.\u003c\/p\u003e","products":[{"product_id":"mse-pro-2-inch-si-doped-n-type-gan-4-5-um-gallium-nitride-template-on-sapphire-0001","title":"MSE PRO 2 inch Si-doped N-type GaN 4.5 um Gallium Nitride Template on Sapphire (0001)","description":"\u003ch2\u003eFeatures for 2 in Si-doped N-type 4.5 um Gallium Nitride Template on Sapphire, SSP or DSP\u003c\/h2\u003e\n\u003cp\u003e\u003cstrong\u003ePart No: WA0204 for SSP sapphire substrate, WA0223 for DSP sapphire substrate\u003c\/strong\u003e\u003cbr\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eConductivity type: N-Type (Si-doped)\u003c\/li\u003e\n\u003cli\u003eSapphire Substrate Polish: Single side polish (SSP) or double side polish (DSP)\u003c\/li\u003e\n\u003cli\u003eDimension: 50.8 mm +\/- 0.2 mm (2 inch diameter)\u003c\/li\u003e\n\u003cli\u003eThickness\/Thickness STD:4.5 ±1 μm \/ \u0026lt; 3%\u003c\/li\u003e\n\u003cli\u003eUsable area: \u0026gt; 90% (edge and macro defects exclusion)\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1 deg\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eResistivity (300K): \u0026lt; 0.05 Ohm-cm \u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1 deg\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePackage: packaged in a clean room environment, in cassettes or single wafer containers.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cul\u003e\u003c\/ul\u003e\n\u003cp\u003eRelated References:\u003c\/p\u003e\n\u003cp\u003e1. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers\u003c\/p\u003e\n\u003cp style=\"display: inline !important;\"\u003e\u003ca href=\"https:\/\/doi.org\/10.1143\/JJAP.31.2883\" target=\"_blank\"\u003ehttps:\/\/doi.org\/10.1143\/JJAP.31.2883\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e2. Band-gap re-normalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/doi.org\/10.1063\/1.371377\" target=\"_blank\"\u003ehttps:\/\/doi.org\/10.1063\/1.371377\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e3. The role of dislocation scattering in \u003ci\u003en\u003c\/i\u003e-type GaN films\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/doi.org\/10.1063\/1.122012\" target=\"_blank\"\u003ehttps:\/\/doi.org\/10.1063\/1.122012\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e4. Activation energies of Si donors in GaN\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/doi.org\/10.1063\/1.115805\" target=\"_blank\"\u003ehttps:\/\/doi.org\/10.1063\/1.115805\u003c\/a\u003e\u003c\/p\u003e\n\u003cdiv class=\"sectionInfo abstractSectionHeading\"\u003e\n\u003cp class=\"sectionHeading\" id=\"fragmentNav_0\"\u003eABSTRACT\u003c\/p\u003e\n\u003c\/div\u003e\n\u003cdiv class=\"NLM_paragraph\"\u003eThe electronic properties of Si donors in\u003cspan\u003e \u003c\/span\u003eheteroepitaxial\u003cspan\u003e \u003c\/span\u003elayers of\u003cspan\u003e \u003c\/span\u003eGaN\u003cspan\u003e \u003c\/span\u003ewere investigated. The\u003cspan\u003e \u003c\/span\u003e\u003ci\u003en-\u003c\/i\u003etype\u003cspan\u003e \u003c\/span\u003eGaN\u003cspan\u003e \u003c\/span\u003elayers were grown by\u003cspan\u003e \u003c\/span\u003emetal organic chemical vapor deposition\u003cspan\u003e \u003c\/span\u003eand either intentionally\u003cspan\u003e \u003c\/span\u003edoped\u003cspan\u003e \u003c\/span\u003ewith Si or unintentionally\u003cspan\u003e \u003c\/span\u003edoped.\u003cspan\u003e \u003c\/span\u003eThe samples were evaluated by variable\u003cspan\u003e \u003c\/span\u003etemperature\u003cspan\u003e \u003c\/span\u003eHall effect\u003cspan\u003e \u003c\/span\u003emeasurements\u003cspan\u003e \u003c\/span\u003eand\u003cspan\u003e \u003c\/span\u003ephotoluminescence\u003cspan\u003e \u003c\/span\u003e(PL)\u003cspan\u003e \u003c\/span\u003espectroscopy.\u003cspan\u003e \u003c\/span\u003eFor both types of samples the\u003cspan\u003e \u003c\/span\u003e\u003ci\u003en\u003c\/i\u003e¨«type conductivity was found to be dominated by a donor with an\u003cspan\u003e \u003c\/span\u003eactivation energy between 12 and 17 meV. This donor is attributed to Si atoms substituting for Ga in the\u003cspan\u003e \u003c\/span\u003eGaN\u003cspan\u003e \u003c\/span\u003elattice (Si\u003csub\u003eGa\u003c\/sub\u003e). The range of\u003cspan\u003e \u003c\/span\u003eactivation energies\u003cspan\u003e \u003c\/span\u003eis due to different levels of donor concentrations and acceptor compensation in our samples. The assignment of a PL signature to a donor acceptor pair recombination involving the Si donor level as the initial state of the radiative transition yields the position of the optical Si donor level in the\u003cspan\u003e \u003c\/span\u003eGaN\u003cspan\u003e \u003c\/span\u003eband gap\u003cspan\u003e \u003c\/span\u003eat u\u003ci\u003eE\u003c\/i\u003e\u003csub\u003e\u003ci\u003ec\u003c\/i\u003e\u003c\/sub\u003e(22+\/-4) meV. A deeper donor level is also present in our\u003cspan\u003e \u003c\/span\u003eGaN\u003cspan\u003e \u003c\/span\u003ematerial with an\u003cspan\u003e \u003c\/span\u003eactivation energy\u003cspan\u003e \u003c\/span\u003eof 34 meV which is tentatively assigned to oxygen donors substituting for nitrogen (O\u003csub\u003eN\u003c\/sub\u003e).\u003c\/div\u003e\n\u003cmain class=\"wrapper main-content\" role=\"main\"\u003e\n\u003cdiv class=\"grid\"\u003e\n\u003cdiv class=\"grid-item large--three-fifths\"\u003e\n\u003cdiv class=\"product-description rte\"\u003e\u003cbr\u003e\u003c\/div\u003e\n\u003c\/div\u003e\n\u003c\/div\u003e\n\u003c\/main\u003e","brand":"MSE Supplies LLC","offers":[{"title":"Single Side Polished (SSP)","offer_id":22126784964,"sku":"WA0204","price":845.95,"currency_code":"USD","in_stock":true},{"title":"Double Side Polished (DSP)","offer_id":23111103021114,"sku":"WA0223","price":854.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/003_MSE_PRO_2_inch_Si-doped_N-type_GaN_4_5_um_Gallium_Nitride_Template_on_Sapphire_0_75b82b774e.jpg?v=1777492609"},{"product_id":"mse-pro-4-inch-n-type-undoped-gan-4-um-gallium-nitride-template-on-sapphire-0001","title":"MSE PRO 4 inch N-Type Undoped GaN 4 um Gallium Nitride Template on Sapphire (0001)","description":"\u003cp\u003e4 inch GaN Templates on Sapphire (0001), N-type (undoped), GaN 4 um\u003c\/p\u003e\n\u003cp\u003e\u003c!-- Header hook for plugins ================================================== --\u003e \u003cscript async=\"\" type=\"text\/javascript\" src=\"\/\/cdn.shopify.com\/s\/javascripts\/shopify_stats.js?v=6\"\u003e\u003c\/script\u003e \u003cscript\u003e\/\/ \u003c![CDATA[\nvarShopify=Shopify||{};Shopify.shop=\"pandaeagle.myshopify.com\";Shopify.theme={\"name\":\"Supply\",\"id\":8952913,\"theme_store_id\":679,\"role\":\"main\"};\n\/\/ ]]\u003e\u003c\/script\u003e \u003cscript id=\"__st\"\u003e\/\/ \u003c![CDATA[\nvar__st={\"a\":7162167,\"offset\":-25200,\"reqid\":\"5b533f4d-3031-42a5-94d6-dad4066c0a9b\",\"pageurl\":\"pandaeagle.myshopify.com\/collections\/frontpage\/products\/2-gan-templates-on-sapphire-0001-n-type-gan-3-5-m\",\"s\":\"products-384611517\",\"t\":\"lead\",\"u\":\"8db7f7899f6c\",\"p\":\"product\",\"rtyp\":\"product\",\"rid\":384611517};\n\/\/ ]]\u003e\u003c\/script\u003e \u003cscript\u003e\/\/ \u003c![CDATA[\n(function(){vars=document.createElement('script');s.type='text\/javascript';s.async=true;s.src='\/\/cdn.shopify.com\/s\/javascripts\/shopify_stats.js?v=6';varx=document.getElementsByTagName('script')[0];x.parentNode.insertBefore(s,x);})();\n\/\/ ]]\u003e\u003c\/script\u003e \u003cscript type=\"text\/javascript\"\u003e\/\/ \u003c![CDATA[\nfunctiongetStyle(el,styleProp){varx=el;if(x.currentStyle)vary=x.currentStyle[styleProp];elseif(window.getComputedStyle)vary=document.defaultView.getComputedStyle(x,null).getPropertyValue(styleProp);returny;}functiondoShift(down){varallElements=document.getElementsByTagName('*');for(vari=0;i\u003callElements.length;i++){if(allElements[i].id!=\"admin_bar_iframe\"\u0026\u0026getStyle(allElements[i],\"position\")==\"fixed\")allElements[i].style.top=parseInt(getStyle(allElements[i],\"top\"),10)+(down?40:-40)+\"px\";}}window.onload=function(){doShift(true);}if(window.addEventListener){addEventListener(\"message\",receiveABMessage,false);}else{window.attachEvent(\"onmessage\",receiveABMessage)}functionsetABVCookie(value){varex=newDate();ex.setDate(ex.getDate()+720);document.cookie=\"_abv=\"+value+\";expires=\"+ex.toUTCString()+\";path=\/\";}functionreceiveABMessage(event){if(event.origin!='https:\/\/pandaeagle.myshopify.com')return;if(event.data=='1'){document.body.style.position='relative';document.documentElement.style.marginTop=\"40px\";doShift(true);varelement=document.getElementById(\"admin_bar_iframe\");element.style.width='100%';element.style.backgroundColor='#191919';element.style.right='auto';element.style.left=0;setABVCookie('1');}elseif(event.data=='0'){document.body.style.position='relative';document.documentElement.style.marginTop=\"0px\";doShift(false);varelement=document.getElementById(\"admin_bar_iframe\");element.style.backgroundColor='transparent';element.style.right='0px';element.style.left='auto';element.style.width='40px';setABVCookie('0');}}\n\/\/ ]]\u003e\u003c\/script\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cscript type=\"text\/javascript\" src=\"\/\/ajax.googleapis.com\/ajax\/libs\/jquery\/1.11.0\/jquery.min.js\"\u003e\u003c\/script\u003e \u003cscript type=\"text\/javascript\" src=\"\/\/cdn.shopify.com\/s\/files\/1\/0716\/2167\/t\/2\/assets\/modernizr.min.js?102\"\u003e\u003c\/script\u003e\u003c\/p\u003e\n\u003cmain class=\"wrapper main-content\" role=\"main\"\u003e\n\u003cdiv class=\"grid\"\u003e\n\u003cdiv class=\"grid-item large--three-fifths\"\u003e\n\u003cdiv class=\"product-description rte\"\u003e\n\u003cul\u003e\n\u003cli\u003eProduct SKU#: WA0213\u003c\/li\u003e\n\u003cli\u003eConductivity type: N-Type (undoped)\u003c\/li\u003e\n\u003cli\u003eDimension: 100 mm +\/- 0.1 mm (4 inch diameter)\u003c\/li\u003e\n\u003cli\u003eGaN Thickness:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e4.5\u003c\/span\u003e\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e+\/-\u003c\/span\u003e\u003cspan\u003e 0.5 um\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eUsable area: \u0026gt;90%\u003c\/li\u003e\n\u003cli\u003eOrientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1\u003c\/li\u003e\n\u003cli\u003ePrimary Orientation Flat of GaN: (1-100) +\/- 0.2 deg, length 30.0 +\/- 1.0 mm\u003c\/li\u003e\n\u003cli\u003eTotal Thickness Variation (TTV): \u0026lt;25 um\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eResistivity (300K): \u0026lt; 0.5 Ohm-cm\u003c\/li\u003e\n\u003cli\u003eDislocation Density: \u0026lt; 5x10^8 cm^-2\u003c\/li\u003e\n\u003cli\u003eCarrier concentration: \u0026gt; 2x10\u003csup\u003e18 \u003c\/sup\u003ecm\u003csup\u003e-3\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eMobility \u0026gt; 200 cm2\/V-s\u003c\/li\u003e\n\u003cli\u003eXRD FWHMs: (0002) \u0026lt; 300 arcsec, (10-12) \u0026lt; 400 arcsec\u003c\/li\u003e\n\u003cli\u003eSurface AFM RMS: \u0026lt; 0.5 nm\u003c\/li\u003e\n\u003cli\u003eSapphire substrate thickness: 650 +\/- 25 \u003cspan\u003eu\u003c\/span\u003em\u003c\/li\u003e\n\u003cli\u003eOrientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1, \u003cspan\u003e length 30.0 +\/- 1.0 mm\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eSubstrate Structure: GaN\/Sapphire (0001)\u003c\/li\u003e\n\u003cli\u003ePolishing: single side polished (SSP) is standard, double side polish is available upon request.\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePackage: packaged in a class 100 clean room environment, in single wafer containers.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eRelated references: \u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003e1. \u003cspan class=\"ng-binding\"\u003eElectrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan class=\"ng-binding\"\u003e\u003cstrong\u003eDOI:\u003cspan\u003e \u003c\/span\u003e\u003c\/strong\u003e\u003cspan\u003e\u003c\/span\u003e\u003ca class=\"ng-binding ng-isolate-scope\" href=\"https:\/\/doi.org\/10.1109\/TNANO.2013.2294996\" rel=\"noopener noreferrer\" target=\"_blank\"\u003e10.1109\/TNANO.2013.2294996\u003c\/a\u003e\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cspan class=\"ng-binding\"\u003e\u003cstrong\u003eAbstract:\u003c\/strong\u003e\u003cspan\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/p\u003e\n\u003cdiv class=\"abstract-text ng-binding\"\u003eElectrical properties of GaN films grown on Si by molecular beam epitaxy using various types of strain-relieving layers have been studied by means of Hall\/van der Pauw measurements, capacitance-voltage profiling, admittance spectroscopy, and deep levels transient spectroscopy with electrical and optical injection. The electrical properties of all grown films were determined by relatively deep electron traps N1, N2, and N3 with aggregate concentration of ~10\u003csup\u003e17\u003c\/sup\u003e\u003cspan\u003e \u003c\/span\u003ecm\u003csup\u003e-3\u003c\/sup\u003e. Freezing out of these traps led to the films freezing out down to the depth corresponding to the nearest underlying heterointerface where a strong band bending caused a sharp nonuniformity of charge carriers concentration. For AlN or Al-rich AlGaN underlying films, this band bending could cause formation of hole sheet charge leading to apparent conductivity to appear p-type in Hall. Other deep traps detected in the grown films were N4 and N5 acceptors with levels near E\u003csub\u003ec\u003c\/sub\u003e\u003cspan\u003e \u003c\/span\u003e- 0.6 eV, and hole traps H1 and H2 with levels near E\u003csub\u003ev\u003c\/sub\u003e\u003cspan\u003e \u003c\/span\u003e+ 0.9 eV. Possible consequences of the observed phenomena for designing the thick GaN stand-off films in power transistors are briefly discussed.\u003c\/div\u003e\n\u003c\/div\u003e\n\u003c\/div\u003e\n\u003c\/div\u003e\n\u003c\/main\u003e\n\u003cp\u003e \u003c\/p\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":41420243566650,"sku":"WA0213","price":1999.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/020_MSE_PRO_4_inch_N-Type_Undoped_GaN_4_um_Gallium_Nitride_Template_on_Sapphire_0001_4f8ad064f8.jpg?v=1777583949"},{"product_id":"mse-pro-4-inch-sapphire-wafer-c-plane-single-or-double-side-polish-al-sub-2-sub-o-sub-3-sub-single-crystal","title":"MSE PRO 4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e Single Crystal","description":"\u003ch2\u003e\u003cstrong\u003eSapphire Wafer, 4 inch, C-plane (0001), Prime Grade\u003c\/strong\u003e\u003c\/h2\u003e\n\u003cp\u003e\u003cstrong\u003eCustomized sapphire wafers and windows are available upon request\u003c\/strong\u003e\u003cbr\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003ca href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\" target=\"_blank\" data-mce-href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\"\u003e\u003cspan\u003e\u003cimg alt=\"\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" data-mce-src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" data-mce-selected=\"1\"\u003e\u003c\/span\u003e\u003c\/a\u003e\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eProduct SKU#:\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eWA0408\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003efor single side polished,\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eWA0409\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003efor double side polished\u003c\/li\u003e\n\u003cli\u003eMaterial: High Purity, \u0026gt;99.99%, single crystal Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 100.0 mm +\/- 0.1 mm\u003c\/li\u003e\n\u003cli\u003eThickness: 650 um +\/- 25 um (SSP) , 600 um +\/- 25 um (DSP)\u003c\/li\u003e\n\u003cli\u003eLattice Parameter: a=4.785 A, c=12.991 A\u003c\/li\u003e\n\u003cli\u003eDensity: 3.98 g\/cm\u003csup\u003e3\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation: C plane sapphire (0001) off M plane 0.2+\/- 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.\u003c\/li\u003e\n\u003cli\u003ePrimary flat orientation: A-plane +\/- 0.2 degree\u003c\/li\u003e\n\u003cli\u003ePrimary flat length: 30.0 +\/- 1 mm\u003c\/li\u003e\n\u003cli\u003eTotal Thickness Variation (TTV): \u0026lt;20 um\u003c\/li\u003e\n\u003cli\u003eBow: \u0026lt;20 um\u003c\/li\u003e\n\u003cli\u003eWarp: \u0026lt;20 um\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eThermal Expansion Coefficient: 6.66 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/ °C parallel to C\u003cspan\u003e \u003c\/span\u003eaxis, 5 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/°C perpendicular to C\u003cspan\u003e \u003c\/span\u003eaxis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eDielectric Strength:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e4.8 x 10\u003c\/span\u003e\u003csup\u003e5\u003c\/sup\u003e\u003cspan\u003e \u003c\/span\u003eV\/cm\u003c\/li\u003e\n\u003cli\u003eDielectric Constant: 11.5 (1 MHz) along C axis, 9.3 \u003cspan\u003e(1 MHz) perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eDielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e4\u003c\/sup\u003e\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eThermal Conductivity: 42W\/(m.K) at 20℃ \u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003ePolishing: single side polished (SSP) front side epi-ready surface Ra \u0026lt; 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra \u0026lt; 0.5 nm (AFM)\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"MSE Supplies","offers":[{"title":"Single Side Polished (SSP)","offer_id":11739986692,"sku":"WA0408","price":91.95,"currency_code":"USD","in_stock":true},{"title":"Double Side Polished (DSP)","offer_id":19455075221562,"sku":"WA0409","price":102.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/056_MSE_PRO_4_inch_Sapphire_Wafer_C-Plane_Single_or_Double_Side_Polish_Al_sub_2_sub__44fce730f1.jpg?v=1777608068"},{"product_id":"mse-pro-2-inch-semi-insulating-gan-2-um-gallium-nitride-template-on-sapphire-0001-1","title":"MSE PRO 2 inch Semi-Insulating GaN 2 um Gallium Nitride Template on Sapphire (0001)","description":"\u003cp\u003e\u003cstrong\u003eProduct Description:\u003c\/strong\u003e 2 inch Semi-Insulating GaN 2 um Gallium Nitride Template on Sapphire (0001)\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eProduct SKU#:\u003c\/strong\u003e WA0203\u003cbr\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eSpecifications:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eConductivity type: semi-insulating\u003c\/li\u003e\n\u003cli\u003eDoping type: un specified\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 2 inch diameter\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eGaN Thickness: 2 micron +\/-10%\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation: C plane (0001) +\/- 0.5 deg\u003c\/li\u003e\n\u003cli\u003ePrimary Orientation Flat: (1-100) +\/- 0.5 degree, length 16.0 +\/- 1.0 mm\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eResistivity (300K): \u0026gt;1x10\u003csup\u003e6 \u003c\/sup\u003eOhm-cm\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eSubstrate Structure: GaN on Sapphire (0001)\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003cp\u003eSapphire substrate thickness: 430 +\/- 25 um\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1\u003c\/li\u003e\n\u003cli\u003eOrientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +\/- 1.0 mm\u003c\/li\u003e\n\u003cli\u003ePolishing: as grown\u003cbr\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eRelated Reference\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/www.nrl.navy.mil\/estd\/sites\/www.nrl.navy.mil.estd\/files\/pdfs\/08-1226-1056.pdf\" target=\"_blank\"\u003eSemi-insulating GaN substrates for high-frequency device fabrication\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eAbstract\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003eThick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.\u003c\/p\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":41420217974842,"sku":"WA0203","price":899.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/075_MSE_PRO_2_inch_Semi-Insulating_GaN_2_um_Gallium_Nitride_Template_on_Sapphire_000_4aade5eeff.jpg?v=1777608319"},{"product_id":"mse-pro-4-inch-semi-insulating-fe-doped-gan-4-um-gallium-nitride-template-on-sapphire-0001","title":"MSE PRO 4 inch Semi-Insulating Fe-doped GaN 4 um Gallium Nitride Template on Sapphire (0001)","description":"\u003cp\u003e\u003cstrong\u003eProduct Description:\u003c\/strong\u003e 4 inch Semi-Insulating Fe-doped GaN 4 um Gallium Nitride Template on Sapphire (0001)\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eProduct Number:\u003c\/strong\u003e WA0246\u003cbr\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eSpecifications:\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eConductivity type: semi-insulating\u003c\/li\u003e\n\u003cli\u003eDoping type: Fe compensated (iron-doped)\u003c\/li\u003e\n\u003cli\u003eFe-doping concentration: 10\u003csup\u003e19\u003c\/sup\u003e cm\u003csup\u003e−\u003c\/sup\u003e\u003csup\u003e3\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 100 mm +\/- 0.1 mm (4 inch diameter)\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eGaN Thickness: typical thickness 4 um\u003c\/li\u003e\n\u003cli\u003eUsable area: \u0026gt;90%\u003c\/li\u003e\n\u003cli\u003eBow: 80~100um\u003c\/li\u003e\n\u003cli\u003eOrientation: C plane (0001) +\/- 0.5 deg\u003c\/li\u003e\n\u003cli\u003ePrimary Orientation Flat: (1-100) +\/- 0.5 degree, length 30.0 +\/- 1.0 mm\u003c\/li\u003e\n\u003cli\u003eTotal Substrate Thickness Variation: \u0026lt;25 um\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eResistivity (300K): \u0026gt;1x10\u003csup\u003e7 \u003c\/sup\u003eOhm-cm\u003c\/li\u003e\n\u003cli\u003eDislocation Density: \u0026lt; 5x10\u003csup\u003e8\u003c\/sup\u003e cm\u003csup\u003e-2\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eRocking Curve XRD: full width at half maximum (FWHM) XRD (102) \u0026lt; 300 arcsec (typical value less than 200), XRD (002) \u0026lt; 250 arcsec (typical value less than 100)\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eSapphire substrate thickness: 650 +\/- 25 um\u003c\/li\u003e\n\u003cli\u003eOrientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1,  length 30.0 +\/- 1.0 mm\u003c\/li\u003e\n\u003cli\u003eSubstrate Structure: GaN\/Sapphire (0001)\u003c\/li\u003e\n\u003cli\u003ePolishing: single side polished (SSP) to Ra \u0026lt; 0.5 nm with CMP\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003ePackage: packed in a class 1000 clean room environment in cassettes of single wafer containers.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eRelated Reference\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/www.nrl.navy.mil\/estd\/sites\/www.nrl.navy.mil.estd\/files\/pdfs\/08-1226-1056.pdf\" rel=\"noopener noreferrer\" target=\"_blank\"\u003eSemi-insulating GaN substrates for high-frequency device fabrication\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eAbstract\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003eThick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.\u003c\/p\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":41420243763258,"sku":"WA0246","price":1448.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/778_MSE_PRO_4_inch_Semi-Insulating_Fe-doped_GaN_4_um_Gallium_Nitride_Template_on_Sap_97b33f99de.jpg?v=1777648192"},{"product_id":"mse-pro-prime-grade-4-inch-r-plane-1-102-al-sub-2-sub-o-sub-3-sub-sapphire-substrate-4-x-650um","title":"MSE PRO Prime Grade 4 Inch R-plane (1-102) Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e Sapphire Substrate, 4\" x 650um","description":"\u003ch2\u003e\n\u003cspan data-mce-fragment=\"1\"\u003eMSE PRO™ Prime Grade 4 Inch R-plane (1-102)\u003c\/span\u003e Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3 \u003c\/sub\u003eSapphire Substrate, \u003cspan class=\"Polaris-Text--root Polaris-Text--headingLg Polaris-Text--bold\"\u003e4\" x 650um\u003c\/span\u003e\n\u003c\/h2\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\" target=\"_blank\" data-mce-href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\"\u003e\u003cspan\u003e\u003cstrong\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" alt=\"\" data-mce-src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\"\u003e\u003c\/strong\u003e\u003c\/span\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cstyle type=\"text\/css\"\u003e\u003c!--td {border: 1px solid #cccccc;}br {mso-data-placement:same-cell;}--\u003e\u003c\/style\u003e\n\u003cstyle type=\"text\/css\"\u003e\u003c!--td {border: 1px solid #cccccc;}br {mso-data-placement:same-cell;}--\u003e\u003c\/style\u003e\n\u003cp\u003e\u003cstrong\u003eCustomized sapphire wafers and windows are available upon \u003c\/strong\u003e\u003cb\u003erequest.\u003c\/b\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eProduct SKU#: \u003cstrong data-mce-fragment=\"1\"\u003e\u003cspan data-sheets-userformat='{\"2\":13055,\"3\":{\"1\":0},\"4\":{\"1\":2,\"2\":16777215},\"5\":{\"1\":[{\"1\":2,\"2\":0,\"5\":{\"1\":2,\"2\":0}},{\"1\":0,\"2\":0,\"3\":3},{\"1\":1,\"2\":0,\"4\":1}]},\"6\":{\"1\":[{\"1\":2,\"2\":0,\"5\":{\"1\":2,\"2\":0}},{\"1\":0,\"2\":0,\"3\":3},{\"1\":1,\"2\":0,\"4\":1}]},\"7\":{\"1\":[{\"1\":2,\"2\":0,\"5\":{\"1\":2,\"2\":0}},{\"1\":0,\"2\":0,\"3\":3},{\"1\":1,\"2\":0,\"4\":1}]},\"8\":{\"1\":[{\"1\":2,\"2\":0,\"5\":{\"1\":2,\"2\":0}},{\"1\":0,\"2\":0,\"3\":3},{\"1\":1,\"2\":0,\"4\":1}]},\"9\":0,\"10\":1,\"12\":0,\"15\":\"Arial\",\"16\":10}' data-sheets-value='{\"1\":2,\"2\":\"WA0442\"}' data-sheets-root=\"1\" data-mce-fragment=\"1\"\u003eWA0446\u003c\/span\u003e (DSP)\u003c\/strong\u003e\n\u003c\/li\u003e\n\u003cli\u003eMaterial: High purity \u0026gt;99.99 %, single crystal Al\u003csub style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif;\"\u003e2\u003c\/sub\u003e\u003cspan style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif; font-size: 0.875rem;\"\u003eO\u003c\/span\u003e\u003csub style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif;\"\u003e3\u003c\/sub\u003e\u003cspan style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif; font-size: 0.875rem;\"\u003e, sapphire wafer.\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 100.00 mm +\/- 0.1 mm, 4 inch\u003c\/li\u003e\n\u003cli\u003eThickness: 650 +\/- 15 um\u003c\/li\u003e\n\u003cli\u003eSurface Orientation: R plane (1-102) +\/- 0.2 degree\u003c\/li\u003e\n\u003cli\u003ePrimary Flat Length: 32 mm +\/- 1 mm\u003c\/li\u003e\n\u003cli\u003ePrimary Flat Orientation: A plane (11-20) +\/- 0.2 degree\u003c\/li\u003e\n\u003cli\u003eTotal Thickness Variation (TTV): ≤15 um (\u003cspan data-mce-fragment=\"1\"\u003eLTV\u003c\/span\u003e\u003cspan data-mce-fragment=\"1\"\u003e≤5 u\u003c\/span\u003e\u003cspan data-mce-fragment=\"1\"\u003em, \u003c\/span\u003e\u003cspan data-mce-fragment=\"1\"\u003e5*5\u003c\/span\u003e)\u003c\/li\u003e\n\u003cli\u003eBow: -15 to 0 um\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eThermal Expansion Coefficient: 6.66 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/ °C parallel to C axis, 5 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/°C perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eThermal Conductivity: 40 W\/(m.K) at 20 ℃ \u003c\/span\u003e\u003cspan\u003e\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eDielectric Strength:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e4.8 x 10\u003c\/span\u003e\u003csup\u003e5\u003c\/sup\u003e\u003cspan\u003e \u003c\/span\u003eV\/cm\u003c\/li\u003e\n\u003cli\u003ePolishing: Double side polished (DSP) Ra \u0026lt;0.3 nm of both sides.\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003e\u003cspan style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif; font-size: 0.875rem;\"\u003e\u003cspan data-mce-fragment=\"1\"\u003eWafer Edge: R-type or standard flash\u003c\/span\u003e\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan style=\"font-family: -apple-system, BlinkMacSystemFont, 'San Francisco', 'Segoe UI', Roboto, 'Helvetica Neue', sans-serif; font-size: 0.875rem;\"\u003eImages for reference only\u003c\/span\u003e\u003cbr\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":40347369734202,"sku":"WA0446","price":703.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/dsp3_37a4d543-ded4-41d2-a167-072659d94800.png?v=1722862169"},{"product_id":"mse-pro-4-inch-x-1-5mm-thick-sapphire-wafer-c-plane-double-side-polish-al-sub-2-sub-o-sub-3-sub-single-crystal","title":"MSE PRO 4 inch x 1.5mm Thick Sapphire Wafer C-Plane Double Side Polish Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e Single Crystal","description":"\u003ch2\u003e\u003cstrong\u003eSapphire Wafer, 4 inch, 1.5mm Thick, C-plane (0001), Prime Grade\u003c\/strong\u003e\u003c\/h2\u003e\n\u003cp\u003e\u003cstrong\u003eCustomized sapphire wafers and windows are available upon request\u003c\/strong\u003e\u003cbr\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003ca href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\" target=\"_blank\" data-mce-href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\"\u003e\u003cspan\u003e\u003cimg alt=\"\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" data-mce-src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" data-mce-selected=\"1\"\u003e\u003c\/span\u003e\u003c\/a\u003e\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eProduct SKU#:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eWA0447\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003efor double side polished\u003c\/li\u003e\n\u003cli\u003eMaterial: High Purity, \u0026gt;99.99%, single crystal Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 100.0 mm +\/- 0.1 mm\u003c\/li\u003e\n\u003cli\u003eThickness: 1.5mm +\/- 0.1 mm\u003c\/li\u003e\n\u003cli\u003eLattice Parameter: a=4.785 A, c=12.991 A\u003c\/li\u003e\n\u003cli\u003eDensity: 3.98 g\/cm\u003csup\u003e3\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation: C plane sapphire (0001) off M plane 0.2+\/- 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eThermal Expansion Coefficient: 6.66 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/ °C parallel to C axis, 5 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/°C perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eDielectric Strength:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e4.8 x 10\u003c\/span\u003e\u003csup\u003e5\u003c\/sup\u003e\u003cspan\u003e \u003c\/span\u003eV\/cm\u003c\/li\u003e\n\u003cli\u003eDielectric Constant: 11.5 (1 MHz) along C axis, 9.3 \u003cspan\u003e(1 MHz) perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eDielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e4\u003c\/sup\u003e\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eThermal Conductivity: 42W\/(m.K) at 20℃ \u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003ePolishing: double side polished (DSP) both front and back sides optical polished\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003c!----\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":40632997118010,"sku":"WA0447","price":219.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SSP_5_e352c9fd-718c-42b4-baf5-607d903ebd0b.png?v=1725913097"},{"product_id":"mse-pro-square-sample-sapphire-wafer-c-plane-al-sub-2-sub-o-sub-3-sub-single-crystal","title":"MSE PRO Square Sample Sapphire Wafer C-Plane Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e Single Crystal","description":"\u003ch2\u003eMSE PRO™ Square Sample Sapphire Wafer C-Plane Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e Single Crystal\u003c\/h2\u003e\n\u003cp\u003e\u003cstrong\u003eCustomized sapphire wafers and windows are available upon request\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e\u003ca href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE-Sapphire_Wafer_-SDS.pdf?v=1612456877\" target=\"_blank\"\u003e\u003cspan\u003e\u003cimg src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/SDS_button_50x50.png?v=1598279051\" alt=\"\"\u003e\u003c\/span\u003e\u003c\/a\u003e\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eMaterial: High Purity \u0026gt;99.99%, single crystal Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003eDimension: 10x10mm\u003c\/li\u003e\n\u003cli\u003eThickness: 1mm other thickness available upon request\u003c\/li\u003e\n\u003cli\u003eLattice Parameter: a=4.785 A, c=12.991 A\u003c\/li\u003e\n\u003cli\u003eDensity: 3.98 g\/cm\u003csup\u003e3\u003c\/sup\u003e\n\u003c\/li\u003e\n\u003cli\u003eOrientation: C plane (0001) to M (1-100) 0.2 +\/- 0.1 degree off.\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eThermal Expansion Coefficient: 6.66 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/ °C parallel to C axis, 5 x 10\u003c\/span\u003e\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e6\u003c\/sup\u003e\u003cspan\u003e \/°C perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003eDielectric Strength:\u003cspan\u003e \u003c\/span\u003e\u003cspan\u003e4.8 x 10\u003c\/span\u003e\u003csup\u003e5\u003c\/sup\u003e\u003cspan\u003e \u003c\/span\u003eV\/cm\u003c\/li\u003e\n\u003cli\u003eDielectric Constant: 11.5 (1 MHz) along C axis, 9.3 \u003cspan\u003e(1 MHz) perpendicular to C axis\u003c\/span\u003e\n\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eDielectric Loss Tangent (a.k.a. dissipation factor): less than 1 x 10\u003csup\u003e-\u003c\/sup\u003e\u003csup\u003e4\u003c\/sup\u003e\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eThermal Conductivity: 40 W\/(m.K) at 20℃ \u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003ePolishing: single side polished (SSP) polished side surface Ra \u0026lt; 0.3 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides surface Ra \u0026lt; 0.3 nm (AFM)\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"MSE Supplies","offers":[{"title":"10x10x1 mm \/ Double Sides Polished","offer_id":40760974835770,"sku":"WA0448","price":41.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/mse-pro-square-sample-jgs2-fused-silica-wafer-dsp-10x10x1-mm-mse-supplies-llc-substrates-21952274530362.png?v=1752496512"}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/collections\/picture1_96214721-a916-4f96-a840-37a274ad3a33.jpg?v=1769048856","url":"https:\/\/www.msesupplies.com\/en-gb\/collections\/sapphire-wafers-and-substrates\/substrates.oembed","provider":"MSE Supplies","version":"1.0","type":"link"}