Laser Diode Grade 2 inch Si-Doped N-type Gallium Nitride Single Crystal C plane (0001)

£3,203⁰⁰

Qty (pieces)	Price (per piece)
1 - 1	$ 3,895.00
2 - 10	$ 3,795.00
11 - 11+	$ 3,695.00

Quantity

Free-standing (single crystal) GaN substrate, C plane (0001), size 2 inch diameter

Conductivity type: N-type Si-doped

SKU# : WA0224

Dimension: 2" diameter
Thickness: 350 +/- 25 um
Usable area: >90%
Orientation: C-plane (0001) off angle toward M-axis <1-100> 0.35 deg +/- 0.15 deg
Total Thickness Variation: <15 um
Bow: < 20 um
Resistivity (300K): < 0.05 Ohm.cm
Carrier Concentration:1e18cm^-3
Mobility: 220 cm²/V*s
Dislocation Density: < 9 x 10⁵ cm^-2
Polishing: Front surface: Ra < 0.2 nm, epi-ready polished. back surface fine ground.
Package: packaged in a class 100 clean room environment, in single wafer container, under nitrogen atmosphere.

Related Reference

1. Blue InGaN/GaN laser diodes grown on (33) free¨«standing GaN substrates

2.Review: InGaN-BASED LASER DIODES

https://www.jsap.or.jp/jsapi/Pdf/Number01/Vol-1_Cutting%20Edge.pdf