Ammonothermal N-type Free-Standing Gallium Nitride (GaN) Substrate
Ammonothermal N-type Free-Standing Gallium Nitride (GaN) Substrate
Free-Standing Gallium Nitride (GaN) is a promising wide band gap material. There are two main ways to produce them, Hydride Vapour Phase Epitaxy (HVPE) and ammonothermal. HVPE has a faster growth rate and can grow GaN substrate as large as 4". Ammonothermally growth method has relatively low growth rate and GaN substrate as large as 2" can be produced. Despite the lower growth rate and smaller sizes, ammonothermally grown GaN substrates have excellent structural properties and low dislocation density. Our free-standing GaN enables the GaN-on-GaN technology for high performance power electronics. It can also be used in various applications, including RF devices, laser diodes and LED.
| Size | 10mm x 10mm | 15mm x 15mm |
| Thickness | 350±50 um | |
| Orientation | C-plane, Miscut angle 0°+/-0.15° toward A, 0.4°+/-0.15° toward M |
|
| Carrier Concentration | >1018 cm-3 | |
| XRD FWHM from (002) | A grade: <100 arcsec (WA0259) B grade: <200 arcsec (WA0260) |
A grade: <100 arcsec (WA0261) B grade: <200 arcsec (WA0262) |
| Polishing | Ga-face: CMP N-face: as processed |
|
| Usable Area | >90% | |
*The picture shown might be different from the actual product.
Customization:
Customized GaN Free-Standing products can be made to meet customer's particular requirements and specifications.
References:
- GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2. In 2015 IEEE international electron devices meeting (IEDM), pp. 9-7. IEEE, 2015.
- High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination. Applied Physics Letters113, no. 2 (2018): 023502.
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