Silicon Germanium (SiGe) Epitaxial Wafer
Silicon Germanium (SiGe) alloys can be grown at mostly any composition on silicon (Si) substrate. It is discovered by researcher at IBM in the 1970s and 1980s and soon become one of the most important discovery in semiconductor. This technology enabling complex strain engineering possibilities which can enhance properties of the semiconductor. Often times, low Germanium (Ge) content alloys (<50%) are grown directly on Si substrates while higher composition Ge alloys (>50%) are grown on relaxed Ge buffers. Compare to silicon, it not only increase the frequency and oscillating capabilities of devices, but also enhance the power consumption and performance. These advantages make it a cost-effective and smaller option. This technology often used in high-speed integrated circuits, wireless communication and photonic applications.
|Wafer Size||4 inch / 6 inch / 8 inch|
|Si Content||X% (X=1~100)|
|SixGe1-x Epi Layer||fully strained / partially / fully relaxed|
*Please note that actual products might be different from the picture.
MSE Supplies offers epitaxy services on various substrate. Please contact us if you need customized specification.
We Also Recommend
MSE PRO 4 Inch Single Wafer Carrier Case (Pack of 10), Polypropylene, Cleanroom Class 100 Grade