{"product_id":"mse-pro-gfet-graphene-field-effect-transistor-chip-for-sensing-applications-4mm-x-4mm","title":"MSE PRO GFET (Graphene Field-Effect Transistor) Chip for Sensing Applications (4mm x 4mm)","description":"\u003ch2\u003e\n\u003cspan\u003eMSE PRO\u003c\/span\u003e\u003cstrong\u003e™\u003c\/strong\u003e\u003cstrong\u003e GFET (Graphene Field-Effect Transistor) Chip for Sensing Applications (4mm x 4mm) \u003c\/strong\u003e\n\u003c\/h2\u003e\n\u003cp\u003eMSE PRO™ provide GFET (Graphene Field-Effect Transistor) Chip for Sensing Applications (4mm x 4mm). The 4x4 chip is designed for sensing applications, and it is compatible with measurements in a liquid medium. The metal pads are passivated to avoid degradation and reduce leakage currents. It also includes a non-encapsulated electrode at the center of the chip, which allows for liquid gating without the need of an external gate electrode (such as Ag\/AgCl probes). This device architecture enhances signal-to-noise ratio and reduces parasitics.\u003c\/p\u003e\n\u003cp\u003eThis version provides 28 graphene channels: 7 of them are one-channel devices and 7 of them are three-channel devices. These two geometries add flexibility to the measurement scheme (ΔVD or ΔIsd). The die is packaged and wirebonded to a leadless chip carrier (LCC).\u003c\/p\u003e\n\u003ch3\u003e\n\u003cstrong\u003eTypical Specifications\u003c\/strong\u003e\u003cstrong\u003e\u003c\/strong\u003e\n\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\u003cspan\u003eGrowth method: CVD synthesis \u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eGraphene transfer: Polymer assisted transfer\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003e Substrate: Si\/SiO\u003c\/span\u003e\u003csub\u003e2\u003c\/sub\u003e\n\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eSubstrate thickness: 525 μm\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eResistivity of Si substrate: 1-10 Ω.cm\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eMetallization: 50nm Au-based Contacts\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eEncapsulation: 50 nm Al\u003csub\u003e2\u003c\/sub\u003eO\u003csub\u003e3\u003c\/sub\u003e\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003eChip dimensions: 4 mm x 4 mm\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eNumber of GFETs per chip: 14\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eNumber of graphene channels per chip: 28\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eOptical Yield: ≥75\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eAverage Dirac point (liquid gating): \u0026lt;1.5 V\u003c\/span\u003e\u003cspan\u003e\u003c\/span\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eAbsolute maximum ratings\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\u003cspan\u003eMaximum gate-source voltage (liquid gating in PBS): ± 1.5V\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eMaximum temperature rating: 150 °C\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eMaximum drain-source current density: \u003c\/span\u003e\u003cspan\u003e10\u003c\/span\u003e\u003csup\u003e7\u003c\/sup\u003e\u003cspan\u003eA.cm\u003c\/span\u003e\u003csup\u003e-2\u003c\/sup\u003e\u003cspan\u003e\u003c\/span\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003e\u003cstrong\u003eQuality control\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003e\u003cspan\u003eAll our samples are subjected to a rigorous QC in order to ensure a high quality products.\u003c\/span\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003e\u003cspan\u003eOptical Microscopy inspection of all the devices\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eRaman spectroscopy of each fabrication batch\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\u003cspan\u003eElectrical characterisation (back gating and liquid gating) of each fabrication batch\u003c\/span\u003e\u003c\/li\u003e\n\u003cli\u003e\n\u003cspan\u003eAFM of each fabrication batch.\u003c\/span\u003e\u003cspan\u003e\u003c\/span\u003e\u003cspan\u003e\u003c\/span\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eApplications\u003c\/h3\u003e\n\u003cp\u003e\u003cspan\u003eGraphene field-effect transistors (GFETs) have unprecedented sensitivity to the surrounding environment and is an ideal transducer for a variety of sensing applications.  Depending on the application. This chip can be tuned to be sensitive only to the stimulus of interest and have shown breakthrough performance in areas such as graphene device research, chemical\/gas sensing, biosensors, chemical sensors, bioelectronics, healthcare and industrial safety applications.\u003c\/span\u003e\u003cstrong\u003e\u003c\/strong\u003e\u003c\/p\u003e\n\u003ch4\u003e\n\u003ca href=\"https:\/\/www.msesupplies.com\/\" rel=\"noopener\" target=\"_blank\"\u003eMSE Supplies\u003c\/a\u003e \u003cem\u003e\u003cstrong\u003e offers \u003c\/strong\u003e\u003c\/em\u003ehigh quality and best price on the market for our graphene products. \u003cem\u003e\u003cstrong\u003ePlease \u003ca rel=\"noopener\" href=\"https:\/\/www.msesupplies.com\/pages\/contact-us-page\" target=\"_blank\"\u003econtact us\u003c\/a\u003e for more information.\u003c\/strong\u003e\u003c\/em\u003e\n\u003c\/h4\u003e\n\u003cul\u003e\u003c\/ul\u003e","brand":"MSE Supplies","offers":[{"title":"Pack of 4 Units","offer_id":40775009271866,"sku":"LS0054","price":556.95,"currency_code":"USD","in_stock":true},{"title":"Pack of 16 Units","offer_id":40775009304634,"sku":"LS0055","price":1880.95,"currency_code":"USD","in_stock":true},{"title":"Pack of 260 Units","offer_id":40775009337402,"sku":"LS0056","price":29501.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/DSC8554_720x_cd92914c-4762-4e02-ac1a-0eb2ba746345.webp?v=1739166835","url":"https:\/\/www.msesupplies.com\/en-de\/products\/mse-pro-gfet-graphene-field-effect-transistor-chip-for-sensing-applications-4mm-x-4mm","provider":"MSE Supplies","version":"1.0","type":"link"}