Specification:
General Wafer | |
Structure | LiTaO3 / Oxide / Poly-Si / Si |
Diameter | Φ150 ± 0.2 mm |
Thickness | 675 ± 30 μm |
Primary Flat Length | 47.5 ± 2 mm |
Wafer Beveling | R Type |
LTV | < 1.5 μm (20∗20 mm2) / 95% |
TTV | < 10 μm |
Bow | ± 40 μm |
Warp | < 50 μm |
Edge Exclusion | 5 mm |
Edge Trimming | 2.5 ± 0.5 mm |
Lithium Tantalate Layer | |
Thickness | 600 ± 50 nm |
Orientation | Y42° ± 0.3° |
Front Surface Roughness (Ra) | < 1 nm |
Front Surface Scratch |
> 1 cm within 3 ; between 1 cm and 2 mm within 10 total |
Primary Flat Orientation | X-axis ± 1° |
Oxide Layer | |
Thickness | 500 ± 50 nm |
Poly-Si Layer | |
Thickness | 1000 ± 100 nm (WA4021) ; 1300 ± 150 nm (WA4022) |
Substrate | |
Material | Si |
Type / Dopant |
P / Boron |
Resistivity | > 5000 ohm.cm |
Orientation | <100> ± 1° (WA4021) ; <111> ± 1° (WA4022) |
Primary Flat Orientation | <110> ± 1° (WA4021) ; <0-11> ± 1° (WA4022) |
Backside | Etched |