{"product_id":"mse-pro-4-inch-aluminum-nitride-aln-800nm-template-on-sapphire-0001","title":"MSE PRO 4 inch Aluminum Nitride AlN (800nm) Template on Sapphire (0001)","description":"\u003ch3\u003e\n\u003cstrong\u003eMSE PRO\u003c\/strong\u003e\u003cstrong\u003e™ 4 inch Aluminum Nitride AlN (800nm) Template on Sapphire (0001)\u003c\/strong\u003e\n\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eBrand:\u003c\/strong\u003e MSE PRO\u003cspan data-mce-fragment=\"1\"\u003e™\u003c\/span\u003e\u003cbr\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eProduct SKU#:\u003c\/strong\u003e WA0106\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSubstrate:\u003c\/strong\u003e Sapphire, 650 +\/- 20 um thickness\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eDimension:\u003c\/strong\u003e diameter 100 mm +\/- 0.2 mm\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eThickness of AlN layer:\u003c\/strong\u003e  800 nm\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUsable Area:\u003c\/strong\u003e \u0026gt;95%\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eOrientation:\u003c\/strong\u003e C plane (0001) +\/- 0.2 degree\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eTotal Thickness Variation (TTV): \u003c\/strong\u003e\u0026lt;20 um\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eCrystallinity:\u003c\/strong\u003e XRD FWHM of (0002) \u0026lt; 100 arcsec, XRD FWHM of (10-12) \u0026lt; 350 arcsec\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSurface Roughness Ra \u003c\/strong\u003e\u0026lt;2 nm (5 um x 5 um area) on the front side; fine ground on the back side\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSubstrate Structure: \u003c\/strong\u003eSapphire (0001), C plane\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePolishing: \u003c\/strong\u003eSingle side polished (SSP) is standard. Double-side polished (DSP) is available upon request.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePackage: \u003c\/strong\u003eThe aluminum nitride template on sapphire substrate wafer is packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e\u003ca href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE_Supplies_AlN_Template_on_Sapphire_Technical_Data_SKU_WA0101.pdf?v=1597441430\" title=\"MSE Supplies AlN Template on Sapphire Technical Data (AFM and XRD)\" data-mce-href=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/MSE_Supplies_AlN_Template_on_Sapphire_Technical_Data_SKU_WA0101.pdf?v=1597441430\"\u003e\u003cstrong\u003eMSE Supplies AlN Template on Sapphire Technical Data (AFM and XRD)\u003c\/strong\u003e\u003c\/a\u003e\u003cbr\u003e\u003c\/p\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\u003cimg height=\"297\" width=\"377\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/AFM_1024x1024.png?v=1709239557\" alt=\"\" style=\"float: none;\"\u003e\u003c\/div\u003e\n\u003cdiv style=\"text-align: start;\"\u003e\n\u003cimg height=\"308\" width=\"403\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/FWHM0002_1024x1024.png?v=1709239475\" alt=\"\" style=\"float: none;\"\u003e\u003cimg height=\"301\" width=\"427\" src=\"https:\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/FWHM10-12_1024x1024.png?v=1709239489\" alt=\"\" style=\"float: none;\"\u003e\n\u003c\/div\u003e\n\u003cul\u003e\u003c\/ul\u003e\n\u003cp\u003e\u003cstrong\u003eResearch publications that cited the use of MSE Supplies AlN template product. \u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003eDavid Arto Laleyan, Kelsey Mengle, Songrui Zhao, Yongjie Wang, Emmanouil Kioupakis, and Zetian Mi, \"\u003ca href=\"https:\/\/www.osapublishing.org\/DirectPDFAccess\/C224AE28-F8F2-0195-2F1066D26C9185D4_396428\/oe-26-18-23031.pdf?da=1\u0026amp;id=396428\u0026amp;seq=0\u0026amp;mobile=no\" target=\"_blank\" data-mce-href=\"https:\/\/www.osapublishing.org\/DirectPDFAccess\/C224AE28-F8F2-0195-2F1066D26C9185D4_396428\/oe-26-18-23031.pdf?da=1\u0026amp;id=396428\u0026amp;seq=0\u0026amp;mobile=no\"\u003eEffect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy\u003c\/a\u003e,\" Opt. Express \u003cb\u003e26\u003c\/b\u003e, 23031-23039 (2018)\u003c\/p\u003e\n\u003cp style=\"padding-left: 30px;\" data-mce-style=\"padding-left: 30px;\"\u003e\u003cspan\u003eTo confirm such a theoretical prediction, we compared the PL emission of h-BN with AlN, a direct bandgap semiconductor with similar energy bandgap values. Shown in Fig. 5(a) are the PL spectra of h-BN grown by plasma-assisted MBE (Sample C) and \u003cstrong\u003e\u003cspan style=\"color: #0000ff;\" data-mce-style=\"color: #0000ff;\"\u003ea commercial AlN epilayer sample (~4 um thick, MSE Supplies LLC) \u003c\/span\u003e\u003c\/strong\u003emeasured under the same conditions at room temperature.\u003c\/span\u003e\u003c\/p\u003e\n\u003cp\u003eS. Jublot-Leclerca, G. Bouhalia, F. Palliera, A. Declémy, \"\u003ca href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S0955221920306385\" target=\"_blank\" data-mce-href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S0955221920306385\"\u003eTemperature dependence of elastic strain and damage build-up in He implanted AlN\u003c\/a\u003e\", Journal of the European Ceramic Society, Volume 41, Issue 1, January 2021, Pages 259-267\u003c\/p\u003e\n\u003cp style=\"padding-left: 30px;\" data-mce-style=\"padding-left: 30px;\"\u003e\u003cspan style=\"color: #2b00ff;\" data-mce-style=\"color: #2b00ff;\"\u003e\u003cstrong\u003eAn epitaxial 4–5 μm-thick layer provided by MSE supplies LLC\u003c\/strong\u003e\u003c\/span\u003e. \u003c\/p\u003e\n\u003cp style=\"padding-left: 30px;\" data-mce-style=\"padding-left: 30px;\"\u003e\u003cspan\u003eThe elastic strain build-up and damage induced by 50 keV He implantation at RT and 550 °C into (0001)AlN were studied using a combination of XRD experiments, XRD simulation, and TEM experiments. Evidence for strong dynamic annealing with efficient point defect recombination is reported at RT. The point defect recombination is found to be enhanced with increasing implantation temperature where He concentration is low, indicating increased mobility of interstitial-type defects and resulting in low strain. A reversed effect is observed for He concentration exceeding 5 at.% (3 at.%) at RT (550 °C) : thermally activated mechanisms related to the nucleation and growth of He-V complexes overcome the point defect recombination and promote the strain and damage build-up. At 1 × 10\u003c\/span\u003e\u003csup\u003e17\u003c\/sup\u003e\u003cspan\u003e cm\u003c\/span\u003e\u003csup\u003e−2\u003c\/sup\u003e\u003cspan\u003e, only clusters of interstitials are observed at RT, whilst bubbles and basal stacking faults are additionally formed at 550 °C for a critical He concentration estimated to be close to 4–6 at.%.\u003c\/span\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cul\u003e\u003c\/ul\u003e\n\u003c\/ul\u003e","brand":"MSE Supplies","offers":[{"title":"Default Title","offer_id":40282541850682,"sku":"WA0106","price":539.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0722\/7785\/files\/DSC_0078_4694bf41-a7b9-4346-8316-3973c528ef50.png?v=1716906355","url":"https:\/\/www.msesupplies.com\/en-de\/products\/mse-pro-4-inch-aluminum-nitride-aln-800nm-template-on-sapphire-0001","provider":"MSE Supplies","version":"1.0","type":"link"}