Specification:
General Wafer | |
Structure | LiNbO3/ SiO2 / LiNbO3 |
Diameter | Φ100 ± 0.2 mm |
Thickness | 500 ± 20 μm |
Primary Flat Length | 32.5 ± 2 mm |
Secondary Flat Length | 12 ± 2 mm |
Wafer Beveling | R Type |
LTV | < 1.5 μm (5∗5 mm2) / 95% |
Bow | Within 50 μm |
Edge Exclusion |
5 mm |
Lithium Niobate Layer | |
Thickness |
300 ± 20 nm ; 400 ± 20 nm ; 500 ± 20 nm ; 600 ± 20 nm ; 700 ± 20 nm |
Orientation | Z axis ± 0.5° |
Primary Flat Orientation | Perpendicular to Y axis ± 1° |
Surface Roughness (Ra) | < 1 nm @ 10 μm x 10 μm |
Defects | > 1 mm None ; ≦ 1 mm within 80 total |
Scratch | > 1 cm None ; ≦ 1 cm within 3 total |
SiO2 Layer | |
Thickness | 2000 ± 100 nm |
Substrate | |
Material | LiNbO3 |
Orientation | Same as top layer |