High Thermal Conductivity Silicon Nitride (Si₃N₄) Ceramic Substrate

Silicon Nitride (Si₃N₄) Ceramic Substrate is mainly composed of Si₃N_4, which is in its most stable form. Among all the ceramic materials, Si₃N₄ is one of the most popular one due to its great overall properties, such as the ability to handle mechanical stress, high resistance to thermal shock, high thermal conductivity and high wear resistance. These properties allow it to withstand high dynamic stress and high temperature conditions. It is widely used as heat dissipation materials for IGBT and SiC MOSFET in in automotive, electronics, aerospace and biomedical industries.

The high thermal conductivity (>80 W/m.K) of our silicon nitride Si₃N₄ ceramic substrate is comparable to Maruwa's silicon nitride Si₃N₄ ceramic substrate.

MSE Supplies also supply various Si₃N₄ceramic parts. Please contact us for bulk order or customization.

Specification:

Dimension (LxW) (mm)	138 x 190 (WA2101)
Color	Gray
Thickness (mm)	0.32
Thermal Conductivity at 25°C (W/m.K)	> 80
Flexural Strength (3 point) (MPa)	> 700
Coefficient of Thermal Expansion (10^-6/K)	40°C-400°C: 2.0~3.0 40°C-800°C: 2.0~3.0
Fracture Roughness (MPa * m^1/2)	≥ 6.5
Breakdown Strength (kV/mm)	≥ 17
Bulk Density (g/cm³)	≥ 3.2
Volume Resistivity at 25°C (Ω･cm)	≥ 10¹⁴
Surface Roughness (μm)	< 0.6 on both sides

References:

1. Tailored Si₃N₄ ceramic substrates for CVD diamond coating. Surface engineering 19, no. 6 (2003): 410-416.

2. Excimer laser mixing of Ti layers on Si₃N₄ ceramic substrates. Applied physics letters 60, no. 7 (1992): 912-914.

High Thermal Conductivity Silicon Nitride (Si3N4) Ceramic Substrate

High Thermal Conductivity Silicon Nitride (Si₃N₄) Ceramic Substrate