100mm or 150mm GaN Epi-wafers on SiC substrates (both N type and Semi-Insulating type are available). Our GaN-on-SiC wafers are grown by the MOCVD process using AIXTRON and Veeco equipment. Custom-made wafers in 4 inch and 6 inch sizes are available. Our GaN epi-wafers have been proven for high performance DC/RF applications.
Learn more about Customized GaN-on-SiC epitaxial wafers from MSE Supplies.