News — Silicon
Revolutionize Wireless Communication Transistors with Gallium Nitride
Posted by MSE Supplies Admin on
Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate. Among its record-setting properties, the new transistor demonstrates the following: Low gate leakage current that ensures over the operation of the device, it does not lose a significant amount of current in the form of heat and general efficiency loss High on/off current ratio which generates a large, measureable difference in the magnitude of current that is transmitted when the device is in its on state versus its off state...
- Tags: Gallium Nitride, GaN, Silicon