News — Silicon

Revolutionize Wireless Communication Transistors with Gallium Nitride

Posted by MSE Supplies Admin on

Researchers at the University of Delaware have developed a new, high-electron mobility transistor based on gallium nitride (GaN) with a barrier of indium aluminum-nitride on top of a silicon substrate.  Among its record-setting properties, the new transistor demonstrates the following: Low gate leakage current that ensures over the operation of the device, it does not lose a significant amount of current in the form of heat and general efficiency loss High on/off current ratio which generates a large, measureable difference in the magnitude of current that is transmitted when the device is in its on state versus its off state...

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