MSE PRO™ 4 inch Tungsten Thin Film on Silicon/SiO₂Wafer

Tungsten (W) thin film on silicon wafer refers to a layer of tungsten material that is deposited onto the surface of a silicon wafer. This process is typically carried out using techniques such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). Tungsten thin film on silicon wafer can be used as barrier layer (preventing the migration of atoms into neighboring layers), etch stop layer (acts as a barrier to protect the underlying layers from etching), etc. With the deposition of tungsten, it provides enhanced electrical conductivity, barrier properties, adhesion, and etch stop functionality. It is widely used for microelectronics and semiconductor manufacturing.

Specification:

Structure	W/Si or W/Oxide/Si
SKU#	W/Si: WA5301 ; W/Oxide/Si: WA5302
Size	4 inch
Substrate	Silicon wafer
Substrate Thickness	525 um
Substrate Orientation	<100>
Substrate Surface	Double side polished
Oxide Thickness	none (WA5301) ; 50 um (WA5302)
Thin Film Material	Tungsten
Thin Film Thickness	100 nm
Thin Film Thickness Tolerance	± 5 %

MSE PRO™ 4 inch Tungsten Thin Film on Silicon/SiO2 Wafer

MSE PRO™ 4 inch Tungsten Thin Film on Silicon/SiO₂Wafer