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Yttria Stabilized Zirconia (YSZ) Single Crystal Substrates

  • $ 1250


YSZ is widely used as an oxide crystal substrate for the epitaxial growth of thin films. Both standard and custom-made products are available from MSE Supplies. Please contact us to request special sizes.

Main Parameters of YSZ crystal substrates
Material 8 mol.% Y2O3 stabilized ZrO2, YSZ (yttria-stabilized zirconia), 8YSZ
Crystal structure
Face Centered Cubic (FCC), CaF2 type fluorite
Unit cell constant
a = 5.125 A
Melt point (degree C)
2500
Density (g/cm3)
5.9
Hardness
8 - 8.5 Mohs
Thermal expansion (/K)
10.3 x 10-6
Dielectric constant (@ 1MHz)
27
Tangent loss 0.0054
Growth method
Skull melting, cold crucible method
Sizes
5x5, 10x5, 10x10, 25.4x25.4, 50.8x50.8 mm
1 inch diameter, 2 inch diameter, 3 inch diameter, other sizes are available upon request
Thickness
0.5 mm or 1.0 mm or customized
Surface polishing
Single or double side polished (epi-ready CMP)
Crystal orientation
(100), (110), (111), +/- 0.5 degree
Surface roughness, Ra:
< 0.5 nm (5 um x 5 um area)
Package
sealed in class 100 clean bags 

 

References:

Growth of Zirconia Crystals by Skull Melting Technique (Chapter 21 in Crystal Growth Technology)
E. E. Lomonova V. V. Osiko
Book Editor(s): Hans J. Scheel Tsuguo Fukuda
First published: 23 September 2003

Highly electrically conductive indiumtinoxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition
Appl. Phys. Lett. 76, 2740 (2000), https://doi.org/10.1063/1.126461
Hiromichi Ohta, Masahiro Orita, and Masahiro Hirano