Silicon Carbide (SiC) Wafers and Substrates

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2 in Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates, MSE Supplies

2 in Silicon Carbide Wafers 4H N-type or Semi-Insulating SiC Substrates

$ 550⁹⁵ Save $ 67⁰⁰

4 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates - MSE Supplies LLC

4 inch High Purity (Undoped) Silicon Carbide Wafers Semi-Insulating SiC Substrates (HPSI)

6 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating

$ 595⁹⁵ Save $ 72⁰⁰

8 inch Silicon Carbide Wafers 4H-SiC N-Type

$ 2,550⁰⁰ Save $ 284⁰⁰

Customized GaN-on-SiC Epitaxial Wafers, 100mm and 150mm

Customized SiC Epitaxial Wafers on SiC Substrates

10 mm x 10 mm 4H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate - MSE Supplies LLC

MSE PRO 10 mm x 10 mm 4H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 89⁹⁵ Save $ 11⁰⁰

10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate, MSE Supplies

MSE PRO 10 mm x 10 mm 6H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 129⁹⁵ Save $ 16⁰⁰

10 mm x 10 mm 6H N-Type SiC, Research Grade, Silicon Carbide Crystal Substrate - MSE Supplies LLC

MSE PRO 10 mm x 10 mm A-plane <11-20> 4H N-Type SiC, Silicon Carbide Crystal Substrate

$ 249⁹⁵ Save $ 30⁰⁰

10 mm x 10 mm 4H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate - MSE Supplies LLC

MSE PRO 10x10x0.5 mm 4H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 119⁹⁵ Save $ 15⁰⁰

MSE PRO 10x10x1 mm 4H Semi-Insulating Type SiC, Research Grade, Silicon Carbide Crystal Substrate

$ 119⁹⁵ Save $ 15⁰⁰

MSE PRO 4 inch 3C-N Type Silicon Carbide Wafers (3C-SiC) - MSE Supplies LLC

MSE PRO 2 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade

$ 1,588⁹⁵ Save $ 191⁰⁰

MSE PRO 2 inch Silicon Carbide Wafers P-Type SiC Substrates (Dummy Grade) - MSE Supplies LLC

MSE PRO 2 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)

$ 318⁹⁵ Save $ 39⁰⁰

MSE PRO 3C-N Type Silicon Carbide Wafers (3C-SiC) Sample Size - MSE Supplies LLC

MSE PRO 3C-N Type Silicon Carbide (3C-SiC) Square Substrate, Dummy Grade

$ 159⁹⁵ Save $ 20⁰⁰

MSE PRO 4 inch 3C-N Type Silicon Carbide Wafers (3C-SiC)

$ 5,469⁹⁵ Save $ 657⁰⁰

MSE PRO 4 inch 3C-N Type Silicon Carbide Wafers (3C-SiC), Dummy Grade

$ 3,969⁹⁵ Save $ 477⁰⁰

MSE PRO 4 inch Silicon Carbide Wafers 4H/6H P-Type SiC Substrates (Dummy Grade)

$ 1,319⁹⁵ Save $ 159⁰⁰

MSE PRO As-cut Silicon Carbide Wafers 4H-SiC Substrates N-Type

$ 295⁰⁰

What are Silicon Carbide (SiC) Wafers & Substrates?

Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust foundation for fabricating high-power, high-frequency electronic devices, such as power electronics and radio frequency components.

Silicon carbide wafers’ unique properties make them ideal for applications requiring high-temperature operation, harsh environments, and improved energy efficiency.

Compared to conventional Si devices, SiC-based power devices have faster switching speeds, higher voltages, lower parasitic resistances, smaller sizes, and less cooling required due to high-temperature capability.

Silicon Carbide (SiC) Wafers & Substrates Applications

Silicon carbide wafers are utilized in electronic devices like power diodes, MOSFETs, high-power microwave devices, and RF transistors, enabling efficient energy conversion and power management. SiC wafers and substrates also find use in automotive electronics, aerospace systems, and renewable energy technologies.

Silicon carbide wafers and SiC substrates are also employed in gas and chemical sensors and advanced research fields like quantum computing and high-frequency communications, driving innovation and performance in various technological domains. High-power MMIC applications often use silicon carbide wafers and substrates. SiC also functions as a substrate for the epitaxial growth of GaN and higher-power MMIC devices.

How Do You Choose Silicon Carbide Wafers & SiC Substrates?

When making silicon carbide wafer and SiC substrate choices, consider the following parameters:

Doping: Select appropriate dopants (e.g., nitrogen, aluminum) for desired electrical properties in SiC material.
Wafer Size: Evaluate available sizes to ensure compatibility with your fabrication process.
Surface Roughness: Assess low roughness values (e.g., RMS <1 nm) to prevent issues during deposition or device fabrication.
Crystal Orientation: Determine the desired orientation (e.g., 4H-SiC, 6H-SiC) for specific device performance.
Thickness: Determine required wafer thickness based on mechanical and electrical requirements.
Defect Density: Evaluate defect presence to improve device performance.
Resistivity: Consider the resistivity range to match the intended electrical behavior of SiC material.

MSE Supplies will customize silicone carbide wafers and substrates to meet your requirements. Custom-made epitaxial wafers such as SiC-on-SiC and GaN-on-SiC wafers are also available. Please request a quote and learn about the solutions we provide.

Order Silicon Carbide Wafers & SiC Substrates from MSE Supplies

MSE Supplies provides the largest selection of silicon carbide wafers and SiC substrates for the lowest price on the market. If you have questions regarding our SiC wafers and substrate, contact us online or at (520)789-6673.