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99.99% 4N Gallium Indium Eutectic for Electrode Contact Application,  MSE Supplies LLC

99.99% 4N Gallium Indium Eutectic for Electrode Contact Application

  • $ 7500


99.99% 4N Gallium Indium Eutectic for Electrode Contact Application

  • Product Number: CM0001 (10 g) CM0002 (100g)
  • Formula: GaIn, 75.5:24.5 wt% 
  • Form: liquid
  • Melting Point: 15.7 °C
  • Density: 6.2 g/cmat 25 °C (lit.)
  • Purity: 99.99% 4N (trace metal basis)

Applications 

Gallium Indium Eutectic is an electrically conductive fluid metal and it can be formed into metastable, non-spherical structures (e.g. cones, and filaments with diameters ≥1 mm). It has a high electrical conductivity (3.4x104 S∙cm-1) and its tendency to make low contact-resistance interfaces with a variety of materials. It is widely used as contact electrode in electrical characterization of thin film organic and semiconductor devices. 

The weight ratio of gallium and indium can be customized upon request. We also can supply Gallium Indium Tin alloy with customized ratio. Please contact us at sales@msesupplies.com. 

Notes: More detailed product information including SDS, certificate of analysis (COA), lead time and volume pricing are available upon request.

References

1. Eutectic Gallium–Indium (EGaIn): A Moldable Liquid Metal for Electrical Characterization of Self‐Assembled Monolayers, Angew. Chem. Int. Ed., 47: 142-144. 

2. Direct Wiring of Eutectic Gallium–Indium to a Metal Electrode for Soft Sensor Systems, ACS Appl. Mater. Interfaces 2019, 11, 22, 20557–20565