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2 inch Undoped N-type GaN 4 um Gallium Nitride Template on Sapphire (0001)

  • $ 18900

Qty (pieces) Price (per piece)
1 - 1 $ 189.00
2 - 10 $ 169.00
11 - 11+ $ 159.00

2 inch GaN Templates on Sapphire (0001), N-type (undoped), 4 um GaN on Sapphire, SSP or DSP

Product SKU#: WA0201 for SSP sapphire substrate, WA0208 for DSP sapphire substrate

  • Conductivity type: N-Type (undoped)
  • Sapphire Substrate Polish: Single side polish (SSP) or double side polish (DSP)
  • Dimension: 50.8 mm +/- 0.2 mm (2 inch diameter)
  • GaN Thickness: 4.5 +/- 0.5 u
  • Usable area: >90%
  • Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1
  • Orientation Flat of GaN: (1-100) +/- 0.2 deg, length 16.0 +/- 1.0 mm
  • Total Thickness Variation: <15 um
  • Resistivity (300K): < 0.5 Ω·cm
  • Dislocation Density: < 5x108 cm-2
  • Doping Concentration: < 5x1017 cm-3
  • Electron Mobility: ~ 300 cm2/V·s
  • Sapphire substrate thickness: 430 +/- 25 um
  • Orientation of sapphire substrate: C plane (0001) off angle toward M-axis 0.2 ± 0.1
  • Orientation Flat of sapphire: (11-20) 0 ± 0.2 deg, length 16.0 +/- 1.0 mm
  • Structure: GaN on Sapphire (0001)
  • Polishing: single side polished (SSP) or double side polished (DSP) of the sapphire substrate
  • Package: packaged in a clean room environment, in cassettes or single wafer containers.

Related References:

Title: Exciton fine structure in undoped GaN epitaxial films

D. Volm, K. Oettinger, T. Streibl, D. Kovalev, M. Ben-Chorin, J. Diener, B. K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu, and T. Detchprohm

Phys. Rev. B 53, 16543 Published 15 June 1996

ABSTRACT
We report on photoluminescence experiments on hexagonal GaN epitaxial films grown by hydride and organometallic vapor phase epitaxy on sapphire and 6H-SiC. At low temperatures we observe free and bound exciton recombinations, which allow us to establish the free-exciton binding energy and the localization energies of the excitons bound to neutral donors in undoped films. We demonstrate that the energetic positions of the excitonic recombination lines depend on the layer thickness and the substrate materials on which the layer was deposited. The influence of strain on the valence-band splittings can be quantified when observing the free-exciton transitions onto the different valence bands. The experimental results are compared to a theoretical calculation using a first-principle total-energy pseudopotential method within the local-density formalism. We present evidence for the existence of two shallow donors in GaN. One of them most likely stems from an intrinsic defect.