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AlGaN/GaN HEMT on 2 inch Sapphire Wafer

  • $ 53500


AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire substrate

Other layer structures can be custom made upon request. Please contact us for a quote.

Schematic_GaN HEMT on Sapphire_MSE Supplies

  • Substrate: C plane Sapphire (0001), 2 inch diameter sapphire wafer, 430 +/- 25 um thickness
  • Thickness of GaN buffer (um): 1.8 +/- 0.25 um
  • AlGaN compostion (%Al): 26 (default) +/- 1.25%, or 20 (optional), 23 (optional)
  • AlGaN thickness (nm): 21 +/- 1 nm
  • AlN thickness: 1 +/- 0.5 nm
  • GaN cap layer thickness: 3 nm
  • Sheet resistance (ohms/sq): <420
  • Electron mobility (cm2/V-sec): >1200 
  • Carrier concentration (/cm): >1e13 
  • Bow: <60 um
  • Buffer Layer Resistivity (ohms/sq): >1e5 ohms/sq
  • Substrate Resistivity (ohms/sq): >10000 ohms/sq

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