Menu
Cart

AlGaN/GaN HEMT on 2 in Sapphire Wafer

  • $ 49500


AlGaN/GaN HEMT transistors (high electron mobility transistors) grown on sapphire wafer

  • Other layer structures can be custom made upon request. Please contact us for a quote.
  • Substrate: Sapphire (0001), 2 inch diameter sapphire wafer
  • Thickness of GaN buffer (um): 1.8 ± 0.25μm
  • AlGaN compostion (%Al): 20 (optional), 23 (optional) or 26 (default) ± 1.25%
  • AlGaN thickness (nm):  21 ± 1nm
  • AlN thickness: 1 ± 0.5nm
  • Sheet resistivity (ohms/sq): <420 ohms/sq
  • mobility(cm2/v-sec): >1200 cm2/V-sec
  • Sheet concentration (/cm³): >1e13/cm³
  • Bow: <60 um
  • Buffer Layer Resistivity (ohms/sq): >1e5 ohms/sq
  • Substrate resistivity (ohms/sq): >10000 ohms/sq 

Related Publications


We Also Recommend