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2 inch Aluminum Nitride (AlN) Template on Sapphire (0001), semi-insulating type, 4000~5000nm

  • 44900


    • Conductivity type: Semi-insulating AlN
    • Substrate: Sapphire
    • Dimension: Φ50.8 mm ± 0.1 mm
    • Thickness: 4 ~ 5 um, or can be customized from 10 to 5000 nm thickness
    • Edge Exclusion Zone: < 2 mm
    • Usable area: >90%
    • Orientation: C plane (0001) ± 1°
    • Total Thickness Variation: <15 μm
    • Crystallinity: XRD FWHM of (0002) < 350 arcsec, XRD FWHM of (10-12) < 450 arcsec
    • Surface Roughness Ra <5 nm (10 µm x 10 µm)
    • Substrate Structure: Sapphire (0001)
    • Polishing: Single side polished (SSP). Double-side polished (DSP) are available upon request.
    • Package: packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere.

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