Where is Silicon Carbide used?
Silicon Carbide (SiC) is a semiconductor material used in a variety of applications such as radio frequency (RF) devices, electric vehicles, power electronics, laser photonics, and LEDs. For these applications Silicon Carbide needs to be of high quality. MSE Supplies offers high quality Silicon Carbide wafers for both research and production.
What are the properties of the standard Silicon Carbide wafers that MSE Supplies offers?
Silicon Carbide (SIC) Wafers offered at MSE Supplies are either N-type or Semi-insulating in the two main polytypes, 4H and 6H. The electrical resistivity of the 4H and 6H semi-insulating silicon carbide is 1x105 Ohm-cm. The 4H and 6H N-type silicon carbide resistivity is 0.015~0.028 and 0.02~0.1 Ohm-cm, respectively. The 4H and 6H N-type or Semi-insulating SiC wafers come in on axis <0001> orientation. The 4H N-type or Semi-insulating SiC wafers also come in off axis (4.0 degrees) toward the <11-20> orientation. All of the silicon carbide MSE Supplies offer comes in four different grades with respect to the micropipe density:
|Zero MPD Grade||Production Grade||Research Grade||Dummy Grade|
|Micropipe density||1 cm-2||5 cm-2||15 cm-2||30 cm-2|
Silicon Carbide offered at MSE Supplies.
MSE Supplies offers standard Silicon Carbide (SiC) wafers in the following sizes and types:
MSE Supplies offers custom Silicon Carbide (SiC) wafers if you need a something not listed above please email us at firstname.lastname@example.org.
Ingots of Silicon Carbide are offered at MSE Supplies.
Silicon Carbide (SiC) ingots are sold at MSE Supplies. These ingots range in size from 2 to 6 inches in diameter and can be either N-type or Semi-Insulating. If you want Silicon Carbide ingots click here. Custom Silicon Carbide parts and components machined from Silicon Carbide ingots can also be made by MSE Supplies based on the drawings and technical specifications provided by customers.
Custom Epitaxial Silicon Carbide wafers at MSE Supplies.
Silicon Carbide (SiC) custom epitaxial wafers are offered at MSE Supplies. We can epitaxially layer SiC of P or N-type and or Semi-insulating onto our Silicon Carbide wafer substrates. Via our CVD process we can control epi-layer thickness, dopant concentration, resistivity to meet your project requirements. The epitaxial layers are not limited to Silicon Carbide. We will provide analytical reports of your customized material. Click here for your gateway to epitaxial wafers on Silicon Carbide Substrates.
MSE Supplies (msesupplies.com) is a major supplier of high quality single crystals and crystal substrates. If you need something not listed on our website please email us at email@example.com and we will prepare a quote for you. If you have any questions, please email us at firstname.lastname@example.org